Molecular beam epitaxy of quantum dots on misoriented GaAs(111)B by droplet epitaxy / submitted by Alexander Trapp né Karlisch ; [Doctoral committee: Prof. Dr. Dirk Reuter, Prof. Dr. Artur Zrenner]. Paderborn, 2019
Inhalt
- Contents
- 1 Introduction
- 2 Fundamentals
- 2.1 Semiconductors
- 2.2 Epitaxy
- 2.2.1 Epitaxial growth modes
- 2.2.2 Misoriented substrates and step-flow growth mode
- 2.2.3 Molecular beam epitaxy
- 2.3 Quantum dots
- 3 Experimental techniques
- 3.1 Molecular beam epitaxy system
- 3.1.1 Substrate preparation
- 3.1.2 Substrate temperature control
- 3.1.3 Reflection high-energy electron diffraction
- 3.2 Atomic force microscopy
- 3.3 Rapid thermal annealing
- 3.4 Photoluminescence spectroscopy
- 4 Results and discussion
- 4.1 Planar growth on misoriented GaAs(111)B
- 4.2 Droplet deposition
- 4.3 Droplet crystallization and annealing
- 4.4 GaAs quantum dot capping and ex-situ annealing
- 4.5 Optical properties of GaAs QDs
- 5 Summary and outlook
- Bibliography
- Appendix