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Molecular beam epitaxy of quantum dots on misoriented GaAs(111)B by droplet epitaxy / submitted by Alexander Trapp né Karlisch ; [Doctoral committee: Prof. Dr. Dirk Reuter, Prof. Dr. Artur Zrenner]. Paderborn, 2019
Inhalt
Contents
1 Introduction
2 Fundamentals
2.1 Semiconductors
2.1.1 Group III - arsenides
2.1.2 The GaAs(111) surface
2.2 Epitaxy
2.2.1 Epitaxial growth modes
2.2.2 Misoriented substrates and step-flow growth mode
Instabilities of the step-flow growth mode
2.2.3 Molecular beam epitaxy
2.3 Quantum dots
2.3.1 Fabrication techniques
2.3.2 Droplet epitaxy
2.3.3 Electronic structure and luminescence
Fine-structure splitting of excitonic complexes
3 Experimental techniques
3.1 Molecular beam epitaxy system
3.1.1 Substrate preparation
3.1.2 Substrate temperature control
3.1.3 Reflection high-energy electron diffraction
3.2 Atomic force microscopy
3.3 Rapid thermal annealing
3.4 Photoluminescence spectroscopy
4 Results and discussion
4.1 Planar growth on misoriented GaAs(111)B
4.1.1 Reconstructions of GaAs(111)B
4.1.2 AlxGa1-xAs
4.1.3 InxGa1-xAs
4.2 Droplet deposition
4.2.1 Ga droplets on Al0.3Ga0.7As(111)B
Droplet density
Droplet morphology
4.2.2 In droplets on GaAs(111)B
4.3 Droplet crystallization and annealing
4.3.1 GaAs quantum dots
4.3.2 InAs quantum dots
4.3.3 In0.2Ga0.8As quantum dots
4.4 GaAs quantum dot capping and ex-situ annealing
4.5 Optical properties of GaAs QDs
4.5.1 Ensemble measurements
Si-doping related emission
4.5.2 Single-dot measurements
5 Summary and outlook
Bibliography
Appendix
A Wafer datasheets
B Growth reports
List of Figures
List of Tables
Publications
Acknowledgments
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