Molecular beam epitaxy of quantum dots on misoriented GaAs(111)B by droplet epitaxy / submitted by Alexander Trapp né Karlisch ; [Doctoral committee: Prof. Dr. Dirk Reuter, Prof. Dr. Artur Zrenner]. Paderborn, 2019
Inhalt
Contents
1 Introduction
2 Fundamentals
2.1 Semiconductors
2.2 Epitaxy
2.2.1 Epitaxial growth modes
2.2.2 Misoriented substrates and step-flow growth mode
2.2.3 Molecular beam epitaxy
2.3 Quantum dots
3 Experimental techniques
3.1 Molecular beam epitaxy system
3.1.1 Substrate preparation
3.1.2 Substrate temperature control
3.1.3 Reflection high-energy electron diffraction
3.2 Atomic force microscopy
3.3 Rapid thermal annealing
3.4 Photoluminescence spectroscopy
4 Results and discussion
4.1 Planar growth on misoriented GaAs(111)B
4.2 Droplet deposition
4.3 Droplet crystallization and annealing
4.4 GaAs quantum dot capping and ex-situ annealing
4.5 Optical properties of GaAs QDs
5 Summary and outlook
Bibliography
Appendix