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Site-controlled nanostructure fabrication by selective area epitaxy through shadow masks / by Viktoriya Zolatanosha ; [1. Reviewer: Prof. Dr. Dirk Reuter, 2. Reviewer: Prof. Dr. Cedrik Meier]. Paderborn, 2020
Inhalt
Contents
List of Figures
List of Tables
List of Abbreviations
Deutsche Zusammenfassung
Abstract
Introduction
Motivation
Thesis overview
Fundamentals
Semiconductors
Group iii-arsenides
Epitaxy
Growth modes
Semiconductor nanostructures
Semiconductor Quantum Dots
Site-controlled Quantum Dots formed by shadow mask approach. Stranski-Krastanow vs Volmer-Weber growth fashion
Growth and characterization methods of III-V semiconductor nanostructures
Principles of Molecular Beam Epitaxy
Molecular Beam Epitaxy System
Atomic Force Microscopy
Scanning Electron Microscopy
Fabrication of Si/Si3N4-mask
Main description. Technical aspects
Mask fabrication procedure
Compatibility with UHV system
Temperature measurement during shadow masked Selective Area Epitaxy
In-situ aperture size reduction
Sample growth and characterization
Selective Area Droplet Epitaxy procedure
Key aspects of the deposition through a shadow mask
Optimization of a site-controlled droplet formation through the shadow mask
Pre-coverage layer thickness and its effect on droplet formation
Coverage layer thickness
Two-step deposition procedure vs direct deposition at elevated temperatures
Summary
Bibliography
Appendix A: Wafer datasheets
Appendix B: Mathematical representation of Si (100) etching
Appendix C: List of Samples
List of Publications
Acknowledgements
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