Germanium doping of aluminum-containing cubic group III-nitride heterostructures / von Michael Deppe. Paderborn, 2020
Content
- Contents
- 1 Introduction
- 2 Fundamentals
- 2.1 Properties of group III nitrides
- 2.2 Doping
- 2.2.1 General
- 2.2.2 Temperature dependence of carrier concentration
- 2.2.3 Effects at high doping levels
- 2.2.4 Doping of group III nitrides
- 2.3 Epitaxy
- 2.3.1 Epitaxy methods
- 2.3.2 Molecular beam epitaxy
- 2.3.3 Antiphase domains
- 2.3.4 Growth monitoring via reflection high-energy electron diffraction
- 2.4 Multiple quantum wells, superlattices and intersubband absorption
- 3 Experimental techniques
- 3.1 Growth of cubic nitrides
- 3.1.1 Setup of the molecular beam epitaxy system
- 3.1.2 Substrate preparation
- 3.1.3 Growth of c-GaN
- 3.1.4 Growth of c-AlN
- 3.1.5 Growth of c-Al(x)Ga(1-x)N
- 3.2 Characterization methods
- 3.2.1 High-resolution x-ray diffraction
- 3.2.2 Atomic force microscopy
- 3.2.3 Secondary ion mass spectrometry
- 3.2.4 Hall effect measurements
- 3.2.5 Capacitance-voltage spectroscopy
- 3.2.6 Photoluminescence spectroscopy
- 3.3 Intersubband absorption
- 4 Results and discussion
- 4.1 Influence of layer thickness on structural properties
- 4.2 Calibration of the time-of-flight secondary ion mass spectrometry Ge-signal
- 4.3 Ge- and Si-doping of c-GaN
- 4.3.1 Time-of-flight secondary ion mass spectrometry depth profiles
- 4.3.2 Structural properties
- 4.3.3 Electrical properties
- 4.3.4 Optical properties
- 4.3.5 Limit of doping
- 4.3.6 Discussion
- 4.4 Ge-doping of c-Al(x)Ga(1-x)N
- 4.4.1 Time-of-flight secondary ion mass spectrometry depth profiles
- 4.4.2 Structural properties
- 4.4.3 Electrical properties
- 4.4.4 Optical properties
- 4.4.5 Conclusion
- 4.5 Reduction of growth rates at high doping levels
- 4.6 Ge-doping of GaN/AlN superlattices
- 5 Summary and outlook
- Bibliography
- Appendix