Remote Heteroepitaxy of In(x)Ga(1-x)As on graphene covered GaAs-(001) substrates / by Tobias Henksmeier ; [Doctoral committee: Prof. Dr. Dirk Reuter, Prof. Dr. Artur Zrenner]. Paderborn, 2021
Content
- Contents
- Introduction
- Fundamentals
- Properties of GaAs and In(x)Ga(1-x)As
- Properties of Heteroepitaxy
- Defects in III-As films
- Remote Epitaxy
- Diffraction phenomena
- Experimental set-up
- Molecular beam epitaxy
- Reactive Ion Etching
- Atomic force microscopy
- High-resolution X-ray diffraction
- Scanning electron microscopy
- TEM, XPS, Raman
- Graphene transfer and sample preparation
- Results
- Sample preparation towards remote epitaxy
- In(x)Ga(1-x)As nucleation on graphene covered GaAs
- Dependence of nuclei distribution and size on temperature and indium concentration
- TEM investigation of individual nuclei
- In(x)Ga(1-x)As film growth on graphene covered GaAs
- Conclusion and Outlook
- Growth sheets
- List of Figures
- List of Tables
- Acronyms
- List of Publications