Remote epitaxy of cubic gallium nitride on graphene-covered 3C-SiC substrates / by Mario Littmann. Paderborn, 2024
Content
- Abstract
- Kurzfassung
- Acronyms
- Table of Contents
- 1. Introduction
- 2. Fundamentals
- 2.1 Nitrides
- 2.2 Quantum-confined Stark effect
- 2.3 Cubic gallium nitride
- 2.4 Epitaxy
- 2.5 Lattice mismatch
- 2.6 Modes of thin film growth
- 2.7 Stacking faults
- 2.8 Remote epitaxy
- 2.9 Graphene
- 3. Experimental setup
- 4. Characterization methods
- 4.1 Raman spectroscopy
- 4.2 High-resolution x-ray diffraction
- 4.3 Atomic force microscopy
- 4.4 Scanning electron microscopy
- 4.5 Electron backscatter diffraction
- 4.6 Photoluminescence
- 5. Experimental Details
- 6. Remote epitaxy
- 6.1 Sample preparation and graphene transfer
- 6.2 Comparison of the graphene quality of two different manufactures
- 6.3 Remote epitaxy of cubic gallium nitride
- 6.4 Optimization of the growth recipe
- 6.5 Optimization of the substrate temperature
- 6.6 Aluminum nitride buffer layer
- 6.7 HRXRD analysis
- 6.8 Remote epitaxy on c-AlN buffer layer
- 6.9 Electron backscatter diffraction
- 6.10 Photoluminescence spectroscopy
- 7. Double AlN buffer
- 8. Lift-off
- 9. Conclusion
- References
- List of Figures
- List of Tables
- Appendix A – Sample list
- Appendix B – List of Publications
- Acknowledgements
- Erklärung der Selbständigkeit