Low-temperature fabrication of amorphous carbon films as a universal template for remote epitaxy / T. Henksmeier, P. Mahler, A. Wolff, D. Deutsch, M. Voigt, L. Ruhm, A. M. Sanchez, D. J. As, G. Grundmeier & D. Reuter. In: Communications materials. Paderborn : Universitätsbibliothek, 2025
Content
- Fabrication of a-C layers
- Nucleation of GaAs on a-C covered GaAs
- Growth on a-C covered InP substrate
- Growth of metastable cubic AlN and GaN
- Growth of highly mismatched Inx Ga1-x As layers on a-C covered GaAs
- Conclusion and outlook
- Methods
- Data availability
- References
- Acknowledgements
- Author contributions
- Funding
- Competing interests
- Additional information