Adaptation of local droplet etching for InGaAs/InAlAs quantum dot fabrication towards telecom C-band emission / Author: Dennis Deutsch, Supervisor: Prof. Dr. Dirk Reuter. Paderborn, 2026
Inhalt
- Declaration of Authorship
- Declaration on the use of AI
- Deutsche Kurzfassung
- Abstract
- Acknowledgements
- Contents
- Introduction
- Polarization entangled photons from quantum dots
- Photon pair entanglement
- Low dimensional semiconductors
- Semiconductor quantum dots
- The biexciton-exciton cascade
- Epitaxy
- Molecular beam epitaxy
- Growth kinetics
- Growth modes
- Material and structural considerations in III–V epitaxy
- Local droplet etching
- Experimental methods for sample characterization
- Atomic force microscopy
- Scanning electron microscopy
- High resolution X-ray diffractometry
- Photoluminescence spectroscopy
- Local droplet etching on In(0.52)Al(0.48)As
- Film growth on InP (100)
- Influence of etching parameters
- Nanohole degradation under As2 flux
- Etching temperature
- In(0.52)Al(0.48)As overgrowth
- As flux and etching material amount
- Droplet material type and etching temperature
- Etching material deposition rate
- Etching time
- Droplet etching with Ga
- Local droplet etching on In(0.53)Ga(0.47)As
- Infilling of droplet etched nanoholes
- Quantum dot fabrication and spectroscopy
- Local droplet etching on metamorphic buffer layers
- Characterization of MBLs
- In(x)Al(1-x)As layer growth on MBLs
- Droplet etching on In(x)Al(1-x)As layers grown on MBLs
- Nanohole infilling and overgrowth
- Summary and Outlook
- Sample number reference catalog
- Scientific contributions
- Bibliography