TY  - JOUR
AB  - Recently, remote epitaxy has been explored for the fabrication of freestanding semiconductormembranes and substrate re-use. For remote epitaxy a thin 2D material layer is either manuallytransferred to a substrate or grown directly on a substrate at high temperature, thus limiting theprocess scalability or the choice of substrates. Here, we report on the low-temperature deposition(300 °C) of ultrathin sp2-hybridized 2D amorphous carbon layers with roughness ≤0.3 nm on III-Vsemiconductor substrates by plasma-enhanced chemical vapor deposition as a universal template forremote epitaxy. We present growth and detailed characterization of 2D amorphous carbon layers onvarious host substrates and their subsequent remote epitaxial overgrowth by solid-source molecularbeam epitaxy. We observe that a low-temperature nucleation step is favorable for nucleation of III-Vmaterial growth on amorphous carbon coated substrates. Under optimized preparation conditions,we obtain high-quality, single-crystalline GaAs, cubic-AlN, cubic-GaN and InxGa1xAs layers onGaAs, 3C-SiC and InP carbon-coated (001)-oriented substrates. Our results demonstrate a universaltemplate fabrication process for remote epitaxy.
AU  - Henksmeier, Tobias
AU  - Mahler, Pascal
AU  - Wolff, Annika
AU  - Deutsch, Dennis
AU  - Voigt, M.
AU  - Ruhm, Lukas
AU  - Sanchez, Ana
AU  - As, Donat
AU  - Grundmeier, Guido
AU  - Reuter, Dirk
DO  - 10.17619/UNIPB/1-2183
PB  - Universitätsbibliothek
DP  - Universität Paderborn
LA  - eng
PY  - 2025
SN  - 2662-4443
SP  - 1 Online-Ressource (Seite 1-12) Diagramme
T2  - Communications materials
TI  - Low-temperature fabrication of amorphous carbon films as a universal template for remote epitaxy
UR  - https://nbn-resolving.org/urn:nbn:de:hbz:466:2-53941
Y2  - 2025-04-19T10:53:08
ER  -