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Im Werk suchen
The modelling of dislocations in semiconductor crystals / Alexander Thorsten Blumenau. 2002
Inhalt
Abstract
Kurzfassung
Contents
List of Figures
List of Tables
Introduction
1 Modelling the Crystal: Theories and Methods
1.1 Density functional theory
1.1.1 Fundamental concepts and equations
1.1.2 The pseudopotential approach
1.1.3 The density-functional based tight-binding approach
1.2 Linear elasticity theory
1.2.1 Fundamental concepts and equations
1.2.2 The contracted matrix notation
1.2.3 The link to isotropic elasticity theory
1.2.4 The Voigt average of elastic constants
2 An Introduction to Dislocation Theory
2.1 The Burgers vector
2.2 Edge and screw dislocations
2.3 Straight dislocations in linear elasticity theory
2.3.1 The elastic strain energy of a straight dislocation
2.3.2 The elastic interaction between two straight dislocations
2.4 Dislocation motion
2.5 The dissociation of dislocations
2.6 The influence of lattice periodicity: Kinks and jogs
2.6.1 The periodic displacement potential of a crystal
2.6.2 Dislocation kinks
2.6.3 Dislocation jogs
3 Dislocations in Tetrahedrally Bonded Semiconductors
3.1 Crystal slip systems and perfect dislocations
3.1.1 The main slip systems
3.1.2 Glide and shuffle structures
3.2 Crystal stacking and partial dislocations
3.3 Further classes of dislocations
4 Dislocations in Diamond
4.1 Introduction and background
4.1.1 Experimental evidence for dislocations in diamond
4.1.2 HPHT treatment --- a threat to the international gem trade
4.1.3 Earlier theoretical work
4.2 The atomic scale modelling of dislocations
4.2.1 The supercell-cluster hybrid as the model of choice
4.2.2 The elastic energy as a size-convergence criterion
4.3 Core structures and energies
4.3.1 Core structures
4.3.2 Core energies
4.3.3 The screw dislocation --- a special case
4.4 The dissociation of dislocations in diamond
4.4.1 The equilibrium separation of partials
4.4.2 Modelling the first stages of dissociation atomistically
4.5 Kinked Shockley partials and dislocation glide
4.5.1 Dislocation glide by kink formation and migration
4.5.2 The 90 glide partial
4.5.3 The 30 glide partial
4.6 Electron microscopy --- a first link to experiments
4.7 Electronic structure calculations and electron energy-loss
4.7.1 The computational approach
4.7.2 Calculated band structures and EEL spectra
4.7.3 Experimental EELS
4.7.4 Electronic structure calculations --- conclusions
4.8 Summary and conclusions (diamond)
4.8.1 Selected results
4.8.2 The decolouring of brown diamonds by HPHT treatment
4.8.3 Outlook
5 Dislocations in Silicon Carbide
5.1 Introduction and background
5.1.1 The different polytypes of SiC
5.1.2 The degradation of SiC PiN diodes under forward-bias
5.1.3 Earlier theoretical work
5.2 Modelling bulk SiC --- the elastic constants
5.3 Straight Shockley partials in the basal plane
5.3.1 Core structures
5.3.2 Core energies
5.4 Dislocation glide motion
5.4.1 The glide motion of 90 partial dislocations
5.4.2 The glide motion of 30 partial dislocations
5.4.3 Dislocation glide motion --- summary
5.5 Electronic structure calculations
5.6 Summary and conclusions (SiC)
5.6.1 Selected results
5.6.2 Recombination-enhanced dislocation glide
5.6.3 Outlook --- an alternative model
6 Summary and Outlook
A Straight Dislocations in Elasticity Theory
A.1 Screw dislocations in isotropic media
A.2 General straight dislocations in isotropic media
A.3 Straight dislocations in anisotropic media
B Transmission Electron Microscopy
B.1 Conventional transmission electron microscopy
B.2 High-resolution transmission electron microscopy
B.3 Alternative techniques
C Electron Energy-Loss Spectroscopy
C.1 The basic principles
C.2 The simulation of EELS
Bibliography
Acknowledgements
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