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Self-assembled epitaxial growth of CdSe quantum dot structures / von Martin Bartels. 2003
Inhalt
Introduction
Self-assembled formation of QDs
Material systems: ZnSe, CdSe and CdS
The different growth modes: FM, VW, SK
Size limited growth of the SK islands
MBE-System and growth procedures of CdSe quantum dots
Equipment of the MBE systems
Growth processes of a CdSe quantum dot structure
Preparation of the sample
Deoxidation and growth of GaAs
Growth of ZnSe
Growth of CdSe quantum dots and wetting layer
Different growth methods
Molecular Beam Epitaxy (MBE)
Atomic Layer Epitaxy (ALE)
Migration Enhanced Epitaxy (MEE)
Deoxidation with an excited hydrogen-plasma
Ignition of the hydrogen plasma
Calculation of the molecular flux
Thickness variation
Structural properties of bimodal CdSe QD ensembles
Formation of type A-islands
Formation of ``large'' islands of CdSe (type B)
Island density distribution function
Island size distribution function
The ``growth window'' for type B-islands
Reversibility of the island formation process
Optical properties of bimodal QD ensembles
Photoluminescence of bimodal QD structures at low excitation
Temperature dependent Photoluminescence
Photoluminescence excitation spectroscopy (PLE)
Timeresolved PL of CdSe QD
Quantum dot spectroscopy
Stimulated emission and optical gain
Conclusions
List of abbreviations and symbols
List of Figures
List of Tables
Bibliography
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