Self-assembled epitaxial growth of CdSe quantum dot structures / von Martin Bartels. 2003
Inhalt
- Introduction
- Self-assembled formation of QDs
- Material systems: ZnSe, CdSe and CdS
- The different growth modes: FM, VW, SK
- Size limited growth of the SK islands
- MBE-System and growth procedures of CdSe quantum dots
- Equipment of the MBE systems
- Growth processes of a CdSe quantum dot structure
- Preparation of the sample
- Deoxidation and growth of GaAs
- Growth of ZnSe
- Growth of CdSe quantum dots and wetting layer
- Different growth methods
- Deoxidation with an excited hydrogen-plasma
- Calculation of the molecular flux
- Thickness variation
- Structural properties of bimodal CdSe QD ensembles
- Formation of type A-islands
- Formation of ``large'' islands of CdSe (type B)
- Island density distribution function
- Island size distribution function
- The ``growth window'' for type B-islands
- Reversibility of the island formation process
- Optical properties of bimodal QD ensembles
- Photoluminescence of bimodal QD structures at low excitation
- Temperature dependent Photoluminescence
- Photoluminescence excitation spectroscopy (PLE)
- Timeresolved PL of CdSe QD
- Quantum dot spectroscopy
- Stimulated emission and optical gain
- Conclusions
- List of abbreviations and symbols
- List of Figures
- List of Tables
- Bibliography