de
en
Schliessen
Detailsuche
Bibliotheken
Projekt
Impressum
Datenschutz
Schliessen
Publizieren
Besondere Sammlungen
Digitalisierungsservice
Hilfe
Impressum
Datenschutz
zum Inhalt
Detailsuche
Schnellsuche:
OK
Ergebnisliste
Titel
Titel
Inhalt
Inhalt
Seite
Seite
Im Werk suchen
Podzimski, Reinold Ephraim: Shift currents in bulk GaAs and GaAs quantum wells analyzed by a combined approach of k.p perturbation theory and the semiconductor Bloch equations. Paderborn, 2016
Inhalt
Abstract
Introduction
Theoretical Basics
Extended Kane Model
Basics of k.p Perturbation Theory
Invariant Formulation of the Extended Kane Model
Semiconductor Bloch Equations
X2 Photo Currents in Semiconductor Systems
Geodesic Grid
Shift Currents in Bulk GaAs
General Shift Current Properties
Symmetry Analysis
Second-Order Analysis
Shift Current in a Geodesic Grid
Photon Energy Dependence
Shift Current Band Analysis
Rabi Flopping
Coherent Control of Shift Currents
Chirped Pulse Excitation
Two-Pulse Phase Control
Shift Currents in GaAs Quantum Wells
Quantum Well Band Structure
Shift Currents in (110)-grown Quantum Wells
Polarization Direction Dependence
Photon Energy Dependence
Shift Currents near the Band Gap
Coulomb Matrix Elements
Calculating the Coulomb Matrix Elements with k.p
Semiconductor Bloch Equations with Coulomb Interaction
Cartesian Grid Consideration
Modified Geodesic Grid
Absorption Spectrum of Bulk GaAs
Shift Current with Excitonic Enhancement
Rectification Currents in GaAs
Rectification Current in Bulk GaAs
Rectification Currents in (110)-grown GaAs Quantum Well Systems
Real-Space Mapping of Shift Currents
Theory
Results
Conclusion
Additional Theory Considerations
Theoretical Basics
Theory of Invariants
Löwdin Partitioning
Matrix Expressions
Extended Kane Parameters
Semiconductor Bloch Equations
Shift Currents in Bulk
Coulomb Hamiltonian
Magnetic Currents
References
Die detaillierte Suchanfrage erfordert aktiviertes Javascript.