Pfanner, Gernot: The dangling-bond defect in silicon : Insights into electronic and structural effects from first-principles calculations of the EPR-parameters. 2012
Inhalt
- Introduction: a-Si:H solar cells
- Electron paramagnetic resonance
- Theoretical modelling of EPR-parameters
- Dangling bonds in molecular and crystalline silicon systems
- Modelling
- Quantification of the accuracy
- General characteristics of the db-defect
- Bond-parameter trends of EPR-parameters
- Bond-parameter dependence of the tetrasilyl radical
- Bond-angle dependence of c-Si models
- Strain dependence of c-Si models
- Summary
- Dangling bonds in hydrogenated amorphous silicon