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Selective Area Growth of cubic Gallium Nitride by Molecular Beam Epitaxy / M. Sc. Falco Meier ; First reviewer: Prof. Dr. Donat J. As, Second reviewer: Prof. Dr. Jörg K. N. Lindner. Paderborn, 2023
Inhalt
Contents
1 Introduction
2 Theory
2.1 Group III-V Nitrides and related Crystals
2.1.1 Properties of Nitrides
2.1.2 Properties of Substrates
2.2 Epitaxy
2.2.1 Epitaxy of cubic Gallium Nitride
2.2.2 Selective Area Growth
2.3 Characterization
2.3.1 Reflective High Energy Electron Deflection
2.3.2 High Resolution X-Ray Diffraction
2.3.3 Atomic Force Microscopy
2.3.4 Electron Microscopy
2.3.5 Photoluminescence Spectroscopy
2.4 Lithography
2.4.1 UV Lithography
2.4.2 Electron Beam Lithography
2.5 Reactive Ion Etching
3 Experimental
3.1 SiO2 Deposition
3.2 Checkerboard Pattern
3.3 Nanosphere Lithography
3.4 Block Co-polymer Lithography
3.5 Electron Beam Lithography
3.6 RIE Patterning of SiO2/3C-SiC (001)
3.7 PAMBE of cubic Gallium Nitride
4 Results
4.1 Selective Area Growth
4.1.1 Critical substrate temperature
4.1.2 SAG on nanoscopic SiO2 Masks
4.1.3 GaN growth on NSL patterned SiO2 on 3C-SiC
4.1.4 GaN growth on NSL patterned SiO2 on 3C-SiC (001)
4.1.5 GaN growth on EBL patterned SiO2 on 3C-SiC
4.1.5.1 V-shaped grooves
4.1.5.2 GaN growth on V-shaped grooves
4.1.5.3 Aspect Ratio Limit
4.1.6 BCP Masks
4.2 PAMBE of c-GaN at elevated temperatures
5 Summary and Outlook
Bibliography
Appendix
A First chapter of appendix
A.1 Sample list
Publications
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