Selective Area Growth of cubic Gallium Nitride by Molecular Beam Epitaxy / M. Sc. Falco Meier ; First reviewer: Prof. Dr. Donat J. As, Second reviewer: Prof. Dr. Jörg K. N. Lindner. Paderborn, 2023
Content
Contents
1 Introduction
2 Theory
2.1 Group III-V Nitrides and related Crystals
2.2 Epitaxy
2.3 Characterization
2.3.1 Reflective High Energy Electron Deflection
2.3.2 High Resolution X-Ray Diffraction
2.3.3 Atomic Force Microscopy
2.3.4 Electron Microscopy
2.3.5 Photoluminescence Spectroscopy
2.4 Lithography
2.5 Reactive Ion Etching
3 Experimental
3.1 SiO2 Deposition
3.2 Checkerboard Pattern
3.3 Nanosphere Lithography
3.4 Block Co-polymer Lithography
3.5 Electron Beam Lithography
3.6 RIE Patterning of SiO2/3C-SiC (001)
3.7 PAMBE of cubic Gallium Nitride
4 Results
4.1 Selective Area Growth
4.1.1 Critical substrate temperature
4.1.2 SAG on nanoscopic SiO2 Masks
4.1.3 GaN growth on NSL patterned SiO2 on 3C-SiC
4.1.4 GaN growth on NSL patterned SiO2 on 3C-SiC (001)
4.1.5 GaN growth on EBL patterned SiO2 on 3C-SiC
4.1.6 BCP Masks
4.2 PAMBE of c-GaN at elevated temperatures
5 Summary and Outlook
Bibliography
Appendix