Selective Area Growth of cubic Gallium Nitride by Molecular Beam Epitaxy / M. Sc. Falco Meier ; First reviewer: Prof. Dr. Donat J. As, Second reviewer: Prof. Dr. Jörg K. N. Lindner. Paderborn, 2023
Content
- Contents
- 1 Introduction
- 2 Theory
- 2.1 Group III-V Nitrides and related Crystals
- 2.2 Epitaxy
- 2.3 Characterization
- 2.3.1 Reflective High Energy Electron Deflection
- 2.3.2 High Resolution X-Ray Diffraction
- 2.3.3 Atomic Force Microscopy
- 2.3.4 Electron Microscopy
- 2.3.5 Photoluminescence Spectroscopy
- 2.4 Lithography
- 2.5 Reactive Ion Etching
- 3 Experimental
- 3.1 SiO2 Deposition
- 3.2 Checkerboard Pattern
- 3.3 Nanosphere Lithography
- 3.4 Block Co-polymer Lithography
- 3.5 Electron Beam Lithography
- 3.6 RIE Patterning of SiO2/3C-SiC (001)
- 3.7 PAMBE of cubic Gallium Nitride
- 4 Results
- 4.1 Selective Area Growth
- 4.1.1 Critical substrate temperature
- 4.1.2 SAG on nanoscopic SiO2 Masks
- 4.1.3 GaN growth on NSL patterned SiO2 on 3C-SiC
- 4.1.4 GaN growth on NSL patterned SiO2 on 3C-SiC (001)
- 4.1.5 GaN growth on EBL patterned SiO2 on 3C-SiC
- 4.1.6 BCP Masks
- 4.2 PAMBE of c-GaN at elevated temperatures
- 5 Summary and Outlook
- Bibliography
- Appendix