This work demonstrates a new and highly scalable concept for coherent phase manipulation of semiconductor quantum dots. Picosecond laser pulses are only used to generate an excitonic population, the coherent manipulation of the qubit is purely electrical. This approach establishes a new field with novel functionalities and concepts, which we call coherent optoelectronics. The coherent optoelectronic control of an exciton qubit is based on the frequency control by means of transient Stark-Shift. In the protocol presented in this dissertation, optical pulse pairs are used only for preparation a superposition state and for quantummechanical interference, where the laser pulses have a constant amplitude and a fixed phase relationship to each other. Between the laser pulses, the coherent phase of thequantum system is controlled by means of electrical pulses. This novel approach allows the realization of scalable and highly dynamic coherent optoelectronic devices. For the generation of electrical pulses, SiGe BiCMOS technology in combination with InGaAs quantum dots was successfully used in this thesis. The quantum dots are embedded in newly developed, low capacitance GaAs Schottky photodiodes. With the focus on chip integration, ultrafast, power-saving chips could be realized that can be used at a temperature of 4.2 K. With this approach it could be shown that a coherent phasechange of a single exciton qubit by up to 3pi within 100 ps can be realized. Furthermore, an electrically induced, robust state preparation was demonstrated using Rapid Adiabatic Passage on InGaAs quantum dot excitons.