Podzimski, Reinold Ephraim: Shift currents in bulk GaAs and GaAs quantum wells analyzed by a combined approach of k.p perturbation theory and the semiconductor Bloch equations. Paderborn, 2016
Inhalt
- Abstract
- Introduction
- Theoretical Basics
- Extended Kane Model
- Semiconductor Bloch Equations
- X2 Photo Currents in Semiconductor Systems
- Geodesic Grid
- Shift Currents in Bulk GaAs
- General Shift Current Properties
- Shift Current in a Geodesic Grid
- Photon Energy Dependence
- Shift Current Band Analysis
- Rabi Flopping
- Coherent Control of Shift Currents
- Shift Currents in GaAs Quantum Wells
- Shift Currents near the Band Gap
- Coulomb Matrix Elements
- Semiconductor Bloch Equations with Coulomb Interaction
- Cartesian Grid Consideration
- Modified Geodesic Grid
- Absorption Spectrum of Bulk GaAs
- Shift Current with Excitonic Enhancement
- Rectification Currents in GaAs
- Real-Space Mapping of Shift Currents
- Conclusion
- Additional Theory Considerations
- Theoretical Basics
- Theory of Invariants
- Löwdin Partitioning
- Matrix Expressions
- Extended Kane Parameters
- Semiconductor Bloch Equations
- Shift Currents in Bulk
- Coulomb Hamiltonian
- Magnetic Currents
- References
